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SPA08N80C3 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPA08N80C3 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page SPA08N80C3 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1100 - pF Output capacitance C oss -46- Effective output capacitance, energy related 5) C o(er) -36- Effective output capacitance, time related 6) C o(tr) -99- Turn-on delay time t d(on) -25- ns Rise time t r -15- Turn-off delay time t d(off) -72- Fall time t f -10- Gate Charge Characteristics Gate to source charge Q gs -6 - nC Gate to drain charge Q gd -22- Gate charge total Q g -45 60 Gate plateau voltage V plateau - 5.5 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=I S=8 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 550 - ns Reverse recovery charge Q rr -7 - µC Peak reverse recovery current I rrm -24- A 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 4) I SD≤ID, di/dt≤400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch V R=400 V, I F=I S=8 A, di F/dt =100 A/µs 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f. 1) J-STD20 and JESD22 Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=0/10 V, I D=8 A, R G=10 Ω, T j=25 °C V DD=640 V, I D=8 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V Rev. 3.0 page 3 200 9-12-22 |
Similar Part No. - SPA08N80C3_09 |
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Similar Description - SPA08N80C3_09 |
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