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SPA08N80C3 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # SPA08N80C3
Description  CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPA08N80C3 Datasheet(HTML) 3 Page - Infineon Technologies AG

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SPA08N80C3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C iss
-
1100
-
pF
Output capacitance
C oss
-46-
Effective output capacitance, energy
related
5)
C o(er)
-36-
Effective output capacitance, time
related
6)
C o(tr)
-99-
Turn-on delay time
t d(on)
-25-
ns
Rise time
t r
-15-
Turn-off delay time
t d(off)
-72-
Fall time
t f
-10-
Gate Charge Characteristics
Gate to source charge
Q gs
-6
-
nC
Gate to drain charge
Q gd
-22-
Gate charge total
Q g
-45
60
Gate plateau voltage
V plateau
-
5.5
-
V
Reverse Diode
Diode forward voltage
V SD
V GS=0 V, I F=I S=8 A,
T j=25 °C
-
1
1.2
V
Reverse recovery time
t rr
-
550
-
ns
Reverse recovery charge
Q rr
-7
-
µC
Peak reverse recovery current
I rrm
-24-
A
5) C
o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C
o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
4) I
SD≤ID, di/dt≤400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
V R=400 V, I F=I S=8 A,
di F/dt =100 A/µs
2) Pulse width t
p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP
AV=E AR*f.
1) J-STD20 and JESD22
Values
V GS=0 V, V DS=100 V,
f =1 MHz
V DD=400 V,
V GS=0/10 V, I D=8 A,
R G=10 Ω, T j=25 °C
V DD=640 V, I D=8 A,
V GS=0 to 10 V
V GS=0 V, V DS=0 V
to 480 V
Rev.
3.0
page 3
200
9-12-22


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