SPA08N80C3_09 datasheet(6/10 Pages) INFINEON

Part #	SPA08N80C3

Description	CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

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Manufacturer	INFINEON [Infineon Technologies AG]

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SPA08N80C3

9 Typ. gate charge

10 Forward characteristics of reverse diode

V GS=f(Q gate); I D=8 A pulsed

I F=f(V SD); t p=10 µs

parameter: V DD

parameter: T j

11 Avalanche energy

12 Drain-source breakdown voltage

E AS=f(T j); I D=1.6 A; V DD=50 V

V BR(DSS)=f(T j); I D=0.25 mA

25 °C

150 °C

150°C (98%)

25°C (98°C)

10

2

10

1

10

0

10

-1

0

0.5

1

1.5

2

V SD [V]

160 V

640 V

0

2

4

6

8

10

0

10203040

Q gate [nC]

680

720

760

800

840

880

920

960

-60

-20

20

60

100

140

180

T j [°C]

0

50

100

150

200

250

300

350

25

50

75

100

125

150

T j [°C]

Rev.

3.0

page 6

200

9-12-22

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SPA08N80C3 Datasheet(PDF) 6 Page - Infineon Technologies AG

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