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SGW25N120 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SGW25N120
Description  Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SGW25N120 Datasheet(HTML) 1 Page - Infineon Technologies AG

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SGW25N120
Power Semiconductors
1
Rev. 2.5
Nov. 09
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
Eoff
Tj
Marking
Package
SGW25N120
1200V
25A
2.9mJ
150
°C
SGW25N120 PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
TC = 25°C
TC = 100°C
IC
46
25
Pulsed collector current, tp limited by Tjmax
ICpuls
84
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
-
84
A
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
IC = 25A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
EAS
130
mJ
Short circuit withstand time
2
VGE = 15V, 100V ≤VCC ≤1200V, Tj ≤ 150°C
tSC
10
µs
Power dissipation
TC = 25°C
Ptot
313
W
Operating junction and storage temperature
Tj , Tstg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3


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