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SKW25N120 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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SKW25N120 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 13 page SKW25N120 Power Semiconductors 7 Rev. 2_2 Sep 08 0A 20A 40A 60A 0mJ 5mJ 10mJ 15mJ 20mJ 25mJ E on* E off E ts* 0 Ω 10 Ω 20 Ω 30 Ω 40 Ω 50 Ω 0mJ 2mJ 4mJ 6mJ 8mJ 10mJ E ts* E on* E off IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150 °C, VCE = 800V, VGE = +15V/0V, RG = 22 Ω, dynamic test circuit in Fig.E ) Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150 °C, VCE = 800V, VGE = +15V/0V, IC = 25A, dynamic test circuit in Fig.E ) -50°C 0°C 50°C 100°C 150°C 0mJ 2mJ 4mJ 6mJ 8mJ E ts* E on* E off 1µs 10µs 100µs 1ms 10ms 100ms 1s 10 -3K/W 10 -2K/W 10 -1K/W 0.01 0.02 0.05 0.1 0.2 single pulse D=0.5 Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 25A, RG = 22 Ω, dynamic test circuit in Fig.E ) Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) *) Eon and Ets include losses due to diode recovery. *) Eon and Ets include losses due to diode recovery. *) Eon and Ets include losses due to diode recovery. C1= τ1/R1 R1 R2 C2= τ2/R2 R ,(K/W) τ , (s ) 0.07417 0.4990 0.20899 0.08994 0.08065 0.00330 0.03681 0.00038 |
Similar Part No. - SKW25N120_08 |
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Similar Description - SKW25N120_08 |
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