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SKW25N120 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # SKW25N120
Description  Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SKW25N120 Datasheet(HTML) 7 Page - Infineon Technologies AG

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SKW25N120
Power Semiconductors
7
Rev. 2_2
Sep 08
0A
20A
40A
60A
0mJ
5mJ
10mJ
15mJ
20mJ
25mJ
E
on*
E
off
E
ts*
0
Ω
10
Ω
20
Ω
30
Ω
40
Ω
50
Ω
0mJ
2mJ
4mJ
6mJ
8mJ
10mJ
E
ts*
E
on*
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150
°C,
VCE = 800V, VGE = +15V/0V, RG = 22
Ω,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150
°C,
VCE = 800V, VGE = +15V/0V, IC = 25A,
dynamic test circuit in Fig.E )
-50°C
0°C
50°C
100°C
150°C
0mJ
2mJ
4mJ
6mJ
8mJ
E
ts*
E
on*
E
off
1µs
10µs
100µs
1ms
10ms 100ms
1s
10
-3K/W
10
-2K/W
10
-1K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
Tj, JUNCTION TEMPERATURE
tp, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 25A, RG = 22
Ω,
dynamic test circuit in Fig.E )
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
C1=
τ1/R1
R1
R2
C2=
τ2/R2
R ,(K/W)
τ , (s )
0.07417
0.4990
0.20899
0.08994
0.08065
0.00330
0.03681
0.00038


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