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SKW30N60 Datasheet(PDF) 5 Page - Infineon Technologies AG

Part # SKW30N60
Description  Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SKW30N60 Datasheet(HTML) 5 Page - Infineon Technologies AG

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SKW30N60
5
Rev. 2_2
Sep 08
0V
1V
2V
3V
4V
5V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
15V
13V
11V
9V
7V
5V
V
GE=20V
0V
1V
2V
3V
4V
5V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
15V
13V
11V
9V
7V
5V
V
GE=20V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25
°C)
Figure 6. Typical output characteristics
(Tj = 150
°C)
0V
2V
4V
6V
8V
10V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
-55°C
+150°C
T
j=+25°C
-50°C
0°C
50°C
100°C
150°C
1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGE
Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(VCE = 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
IC = 30A
IC = 60A


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