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SPA11N80C3 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # SPA11N80C3
Description  CoolMOSTM Power Transistor Features New revolutionary high voltage technology
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPA11N80C3 Datasheet(HTML) 2 Page - Infineon Technologies AG

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SPA11N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous diode forward current
I S
A
Diode pulse current
2)
I S,pulse
33
Reverse diode dv /dt
4)
dv /dt
4
V/ns
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
-
-
3.7
K/W
R thJA
leaded
-
-
80
Soldering temperature,
wave soldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10s
-
-
260
°C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
800
-
-
V
Avalanche breakdown voltage
V (BR)DS V GS=0 V, I D=11 A
-
870
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.68 mA
2.1
3
3.9
Zero gate voltage drain current
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
-
-
20
µA
V DS=800 V, V GS=0 V,
T j=150 °C
-
100
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=7.1 A,
T j=25 °C
-
0.39
0.45
V GS=10 V, I D=7.1 A,
T j=150 °C
-
1.05
-
Gate resistance
R G
f =1 MHz, open drain
-
1.2
-
Values
Thermal resistance, junction -
ambient
Value
T C=25 °C
11
Rev. 2.9
page 2
2008-10-15


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