IGB30N60T_09 datasheet(2/12 Pages) INFINEON

Part #	IGB30N60T

Description	Low Loss IGBT in TrenchStop technology

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Manufacturer	INFINEON [Infineon Technologies AG]

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IGB30N60T

TrenchStop® Series

q

2

Rev. 2.3 04.03.2009

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

RthJC

0.80

Thermal resistance,

junction – ambient

RthJA

6 cm² Cu

40

K/W

Electrical Characteristic, at Tj = 25

°C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Static Characteristic

Collector-emitter breakdown voltage

V(BR)CES VGE=0V, IC=0.2mA

600

-

Collector-emitter saturation voltage

VCE(sat)

VGE = 15V, IC=30A

Tj=25

°C

Tj=175

°C

-

1.5

1.9

2.05

-

Gate-emitter threshold voltage

VGE(th)

IC=0.43mA,

VCE=VGE

4.1

4.9

5.7

V

Zero gate voltage collector current

ICES

VCE=600V,

VGE=0V

Tj=25

°C

Tj=175

°C

-

40

1000

µA

Gate-emitter leakage current

IGES

VCE=0V,VGE=20V

-

100

nA

Transconductance

gfs

VCE=20V, IC=30A

-

16.7

-

S

Integrated gate resistor

RGint

-

Ω

Dynamic Characteristic

Input capacitance

Ciss

-

1630

-

Output capacitance

Coss

-

108

-

Reverse transfer capacitance

Crss

VCE=25V,

VGE=0V,

f=1MHz

-

50

-

pF

Gate charge

QGate

VCC=480V, IC=30A

VGE=15V

-

167

-

nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE

-

7

-

nH

Short circuit collector current

1)

IC(SC)

VGE=15V,tSC

≤5µs

VCC = 400V,

Tj = 150

°C

-

275

-

A

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

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