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PTFA080551F Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # PTFA080551F
Description  Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 ??960 MHz
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PTFA080551F Datasheet(HTML) 2 Page - Infineon Technologies AG

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Data Sheet
2 of 11
Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 600 mA, POUT = 55 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
18
18.5
dB
Drain Efficiency
ηD
46.5
48
%
Intermodulation Distortion
IMD
–31
–29
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
1.0
µA
VDS = 63 V, VGS = 0 V
IDSS
10.0
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
0.15
V
Operating Gate Voltage
VDS = 28 V, IDQ = 450 mA
VGS
2.0
2.3
3.0
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
219
W
Above 25°C derate by
1.25
W/°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RθJC
0.8
°C/W
Ordering Information
Type and Version
Package Outline
Package Description
Shipping
Marking
PTFA080551E
V4
H-36265-2
Thermally-enhanced,
Tray
PTFA080551E
slotted flange, single-ended
PTFA080551F
V4
H-37265-2
Thermally-enhanced,
Tray
PTFA080551F
earless flange, single-ended
*See Infineon distributor for future availability.


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