IKP20N60T datasheet(7/14 Pages) INFINEON

Part #	IKP20N60T

Description	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKP20N60T

TrenchStop® Series

IKW20N60T

Power Semiconductors

7

Rev. 2.5 Sep. 08

0A

5A

10A 15A 20A 25A 30A 35A

0.0mJ

0.4mJ

0.8mJ

1.2mJ

1.6mJ

2.0mJ

2.4mJ

E

ts*

E

off

*) E

on and Ets include losses

due to diode recovery

E

on*

0Ω

15Ω

30Ω

45Ω

60Ω

0.0m J

0.4m J

0.8m J

1.2m J

1.6m J

2.0m J

2.4m J

E

ts*

E

off

*) E

on a nd E ts in clu de lo ss es

due to diode recovery

E

on*

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, RG = 12Ω,

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 20A,

Dynamic test circuit in Figure E)

25°C

50°C

75°C

100°C 125°C 150°C

0.0mJ

0.2mJ

0.4mJ

0.6mJ

0.8mJ

1.0mJ

E

ts*

E

off

*) E

on and Ets include losses

due to diode recovery

E

on*

300V 350V 400V 450V 500V 550V

0.0m J

0.2m J

0.4m J

0.6m J

0.8m J

1.0m J

1.2m J

1.4m J

1.6m J

1.8m J

2.0m J

E

ts*

E

on*

*) E

on and E ts in clude lo sses

due to diode recovery

E

off

TJ, JUNCTION TEMPERATURE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 20A, RG = 12Ω,

Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 20A, RG = 12Ω,

Dynamic test circuit in Figure E)

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