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IKW15N120T2 Datasheet(PDF) 10 Page - Infineon Technologies AG |
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IKW15N120T2 Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 15 page IKW15N120T2 TrenchStop® 2nd generation Series Power Semiconductors 10 Rev. 2.1 Sep 08 0V 200V 400V 600V 0A 5A 10A 15A 20A 25A 1.2us 0.8us 0.4us 0us I C V CE 0V 200V 400V 600V 0A 5A 10A 15A 1.2us 0.8us 0.4us 0us I C V CE t, TIME t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=41.8Ω, Tj = 175 °C, Dynamic test circuit in Figure E) Figure 22. Typical turn off behavior (VGE=15/0V, RG=41.8Ω, Tj = 175 °C, Dynamic test circuit in Figure E) 10µs 100µs 1ms 10ms 100ms 10 -2K/W 10 -1K/W 10 0K/W single pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 10µs 100µs 1ms 10ms 100ms 10 -2K/W 10 -1K/W 10 0K/W single pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 tP, PULSE WIDTH tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) R ,(K/W) τ , (s ) 0.143 3.06*10 -4 0.217 3.47*10 -3 0.258 1.71*10 -2 0.017 2.63*10 -1 C1= τ1/R1 R1 R2 C2= τ2/R2 R ,(K/W) τ , (s ) 0.291 2.75*10 -4 0.434 2.60*10 -3 0.363 1.48*10 -2 0.028 1.78*10 -1 C1= τ1/R1 R1 R2 C2= τ2/R2 |
Similar Part No. - IKW15N120T2_08 |
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Similar Description - IKW15N120T2_08 |
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