IKW50N60T datasheet(3/13 Pages) INFINEON | Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

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IKW50N60T Datasheet(PDF) 3 Page - Infineon Technologies AG

Part #	IKW50N60T

Description	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

Download	13 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IKW50N60T

TrenchStop® Series

q

Power Semiconductors

3

Rev. 2.4 Sep 08

Switching Characteristic, Inductive Load, at Tj=25

°C

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

26

-

Rise time

tr

-

29

-

Turn-off delay time

td(off)

-

299

-

Fall time

tf

-

29

-

ns

Turn-on energy

Eon

-

1.2

-

Turn-off energy

Eoff

-

1.4

-

Total switching energy

Ets

Tj=25

°C,

VCC=400V,IC=50A,

VGE=0/15V,

RG= 7

Ω,

Lσ

1) =103nH,

Cσ

1) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-

2.6

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

143

-

ns

Diode reverse recovery charge

Qrr

-

1.8

-

µC

Diode peak reverse recovery current

Irrm

-

27.7

-

A

Diode peak rate of fall of reverse

recovery current during tb

dirr/dt

Tj=25

°C,

VR=400V, IF=50A,

diF/dt=1280A/

µs

-

671

-

A/

µs

Switching Characteristic, Inductive Load, at Tj=175

°C

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

27

-

Rise time

tr

-

33

-

Turn-off delay time

td(off)

-

341

-

Fall time

tf

-

55

-

ns

Turn-on energy

Eon

-

1.8

-

Turn-off energy

Eoff

-

1.8

-

Total switching energy

Ets

Tj=175

°C,

VCC=400V,IC=50A,

VGE=0/15V,

RG= 7

Ω

Lσ

1) =103nH,

Cσ

1) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-

3.6

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

205

-

ns

Diode reverse recovery charge

Qrr

-

4.3

-

µC

Diode peak reverse recovery current

Irrm

-

40.7

-

A

Diode peak rate of fall of reverse

recovery current during tb

dirr/dt

Tj=175

°C

VR=400V, IF=50A,

diF/dt=1280A/

µs

-

449

-

A/

µs

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

Similar Part No. - IKW50N60T

Manufacturer	Part #	Datasheet	Description
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