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IPT2508-DEA Datasheet(PDF) 1 Page - IP SEMICONDUCTOR CO., LTD. |
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IPT2508-DEA Datasheet(HTML) 1 Page - IP SEMICONDUCTOR CO., LTD. |
1 / 4 page IP Semiconductor Co., Ltd. IPT2508-xxA High current density due to double mesa technology; SIPOS and Glass Passivation. IPT2508-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT2506-xx series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads. The IPT2508-xxA (Insulated version) series are isolated internally they provides a 2500V RMS isolation voltage from all three terminals to external heatsink. MAIN FEATURES ABSOLUTE MAXIMUM RATINGS 1 TO-220A Symbol Value Unit IT(RMS) 25 A VDRM / VRRM 800 V VTM ≤ 1.55 V Parameter Symbol Value Unit Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +125 ℃ Repetitive Peak Off-state Voltage Tj = 25℃ Repetitive Peak Reverse Voltage VDRM VRRM 800 800 V Non Repetitive Peak Off-state Voltage Tj = 25℃ Non Repetitive Peak Reverse Voltage VDSM VRSM 900 900 V RMS on –state current Tc = 90℃ (360º conduction angle ) IT(RMS) 25 A Non repetitive surge peak on –state Current t = 8.3ms (full cycle, Tj = 25℃) t = 10ms ITSM 260 250 A I²t Value for fusing tp = 10ms I²t 340 A²s Critical Rate of rise of on-state current IG = 2 x IGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ dI / dt 50 A/us Peak gate current tp = 20us, Tj = 125 ℃ IGM 4 A Average gate power dissipation Tj = 125 ℃ PG(AV) 1 W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com |
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