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IPP04CN10NG Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPP04CN10NG Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page IPB04CN10N G IPI04CN10N G IPP04CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC 1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 2) 100 A T C=100 °C 100 Pulsed drain current 3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 1000 mJ Gate source voltage 4) V GS ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 100 V R DS(on),max (TO 263) 3.9 m Ω I D 100 A Product Summary Type IPB04CN10N G IPI04CN10N G IPP04CN10N G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 Marking 04CN10N 04CN10N 04CN10N Rev. 1.4 page 1 2010-01-13 |
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