SIGC100T60R3_10 datasheet(2/5 Pages) INFINEON

Part #	SIGC100T60R3

Description	600V Trench & Field Stop technology positive temperature coefficient

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SIGC100T60R3

Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter voltage, Tvj =25

°C

VCE

600

V

DC collector current, limited by Tvj max

IC

1 )

A

Pulsed collector current, tp limited by Tvj max

Ic,puls

600

A

Gate emitter voltage

VGE

±20

V

Junction temperature range

Tvj

-40 ... +175

°C

Operating junction temperature

Tvj

-40...+150

°C

Short circuit data 2 ) VGE = 15V, VCC = 360V, Tvj = 150°C

tSC

6

µs

Reverse bias safe operating area 2 ) (RBSOA)

IC,max = 400A, VCE,max = 600V

Tvj

≤ 150°C

1 ) depending on thermal properties of assembly

2 ) not subject to production test - verified by design/characterization

Static Characteristic (tested on wafer), Tvj =25

°C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Collector-Emitter breakdown voltage

V(BR)CES

VGE=0V , IC= 4 mA

600

Collector-Emitter saturation voltage

VCEsat

VGE=15V, IC=200A

1.05

1.45

1.85

Gate-Emitter threshold voltage

VGE(th)

IC=3.2mA , VGE=VCE

5.0

5.8

6.5

V

Zero gate voltage collector current

ICES

VCE=600V , VGE=0V

10.1

µA

Gate-Emitter leakage current

IGES

VCE=0V , VGE=20V

600

nA

Integrated gate resistor

rG

2

Ω

Dynamic Characteristic (not subject to production test - verified by design / characterization), Tvj =25

°C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Input capacitance

Cies

12335

Output capacitance

Coes

769

Reverse transfer capacitance

Cres

VCE=25V,

VGE=0V,

f=1MHz

366

pF

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