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SIDC04D60F6 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SIDC04D60F6 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIDC04D60F6 Edited by INFINEON Technologies, IMM PSD, L4334M, Edition 2.1, 09.03.2010 Fast switching diode This chip is used for: • power modules and discrete devices Features: • 600V Emitter Controlled technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Applications: • SMPS, resonant applications, drives A C Chip Type VR IF Die Size Package SIDC04D60F6 600V 9A 1.85 x 1.85 mm2 sawn on foil Mechanical Parameters Raster size 1.85 x 1.85 Area total 3.42 Anode pad size 1.368 x 1.368 mm 2 Thickness 70 µm Wafer size 150 mm Max. possible chips per wafer 4497 Passivation frontside Photoimide Pad metal 3200 nm AlSiCu Backside metal Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, ≤250µm Reject ink dot size ∅ 0.65mm; max 1.2mm Recommended storage environment Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C |
Similar Part No. - SIDC04D60F6_10 |
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Similar Description - SIDC04D60F6_10 |
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