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UBA3070 Datasheet(PDF) 5 Page - NXP Semiconductors |
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UBA3070 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 16 page UBA3070 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 9 December 2010 5 of 16 NXP Semiconductors UBA3070 LED backlight driver IC 7.3 Masking and valley switching The MASK pin ensures that switch-on of the converter is at a valley during ringing and not at a peak during freewheeling of the inductor. If the voltage level at the MASK pin is above 100 mV, then switch-on of the switching FET is prevented. If the voltage level is below 100 mV, then switch-on prevention of the FET is released and at the moment of valley detection the FET is turned on. The signal for the MASK pin can be derived from the signal at the switch node as shown in Figure 2. The current flowing into the MASK pin must be lower than the typical stop current of 60 μA. If the MASK pin is open circuit or not connected, a fault condition is assumed and the converter stops operating immediately. Operation restarts as soon as the fault condition is removed. 7.4 Conversion frequency The maximum conversion frequency of the UBA3070 is limited to 175 kHz. However, due to production spread, the maximum conversion frequency of an individual UBA3070 sample can be as low as 145 kHz. Therefore, an inductance value must be selected so that the applications conversion frequency always remains below 145 kHz after taking into account variations due to the supply voltage, LED string voltage and component spread. There is no limitation for the minimum conversion frequency. 7.5 Minimum on-time The LEB time, typically 370 ns is a fixed delay that determines the minimum on-time of the controller. The LEB time prevents the MOSFET switch from switching off unintentionally (due to coupling to the sense node) directly after the start of a conversion cycle. 7.6 OverCurrent Protection (OCP) As the converter acts as a current source it is self-protected from overcurrent by an extra level of protection, i.e. a second trip level of typically 0.88 V applied to the short-winding/ sense node as shown in Figure 1. This second trip level is designed to protect the convertor against short-circuits in external components e.g. in the diodes, inductors, capacitors and/or LEDs. If a short-circuit is detected the convertor stops switching. 7.7 OverTemperature Protection (OTP) OTP is provided in the UBA3070 IC and functions as follows. When the junction temperature exceeds the thermal shutdown temperature of typically 140 °C the converter stops switching. 7.8 Driver The driver circuit to the gate of the power FET has a current sourcing capability of approximately 135 mA and a current sinking capability of 560 mA. This capability means the FET operates more efficiently with fast switch-on and switch-off cycles. A low driver source current has been chosen to limit the ΔV/Δt at switch-on thereby reducing EMI and voltage spikes across Rsense. |
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