BZT52H_SER

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 3 — 7 December 2010

3 of 13

NXP Semiconductors

BZT52H series

Single Zener diodes in a SOD123F package

5.

Limiting values

[1]

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

[3]

Soldering point of cathode tab.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

forward current

-

250

mA

non-repetitive peak

reverse current

-

see

Table 8, 9

and 10

non-repetitive peak

reverse power dissipation

[1] -40

W

total power dissipation

[2] -

375

mW

[3] -

830

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1] --

330

K/W

[2] --

150

K/W

thermal resistance from

junction to solder point

[3] --

70

K/W