MRFG35003N6AT1 datasheet(2/11 Pages) FREESCALE

Part #	MRFG35003N6AT1

Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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RF Device Data

Freescale Semiconductor

MRFG35003N6AT1

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Saturated Drain Current

(VDS = 3.5 Vdc, VGS = 0 Vdc)

IDSS

—

2.9

—

Adc

Off State Leakage Current

(VGS = -0.4 Vdc, VDS = 0 Vdc)

IGSS

—

< 1

100

μAdc

Off State Drain Current

(VDS = 6 Vdc, VGS = -2.2 Vdc)

IDSO

—

50

1000

μAdc

Off State Current

(VDS = 20 Vdc, VGS = -2.5 Vdc)

IDSX

—

< 1

15

mAdc

Gate-Source Cut-off Voltage

(VDS = 3.5 Vdc, IDS = 15 mA)

VGS(th)

-1.2

-0.95

-0.7

Vdc

Quiescent Gate Voltage

(VDS = 6 Vdc, ID = 180 mA)

VGS(Q)

-1.1

-0.82

-0.6

Vdc

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mWatts Avg., f = 3550 MHz,

Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

8

10

—

dB

Drain Efficiency

hD

22

27

—

%

Adjacent Channel Power Ratio

ACPR

—

-42.5

-38

dBc

Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 6 Vdc, IDQ = 180 mA, f = 3550 MHz

Output Power, 1 dB Compression Point, CW

P1dB

—

3

—

W

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MRFG35003N6AT1 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc

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