CCD area image sensors

S10814, S10811

2

Absolute maximum ratings (Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Storage temperature

Tstg

-20

-

+70

°C

Operating temperature

Topr

0

-

+40

°C

OD voltage

-0.5

-

+20

V

RD voltage

-0.5

-

+18

V

SG voltage

-15

-

+15

V

OG voltage

-15

-

+15

V

RG voltage

-15

-

+15

V

TG voltage

-15

-

+15

V

Vertical clock voltage

-15

-

+15

V

Horizontal clock voltage

-15

-

+15

V

Vcc voltage

Vcc

0

-

+7

V

Operating conditions (MPP mode, Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Output transistor drain voltage

12

15

-

V

Reset drain voltage

12

13

14

V

Output gate voltage

-0.5

2

5

V

Substrate voltage

Vss

-

0

-

V

Vertical shift register

clock voltage

High

03

6

V

Low

-9

-8

-7

V

Horizontal shift register

clock voltage

High

03

6

V

Low

-9

-8

-7

V

Summing gate voltage

High

03

6

V

Low

-9

-8

-7

V

Reset gate voltage

High

03

6

V

Low

-9

-8

-7

V

Transfer gate voltage

High

03

6

V

Low

-9

-8

-7

V

+5 V power supply voltage

Vcc

4.75

5

5.25

V

Electrical characteristics (Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

fc

-

1

-

MHz

Vertical shift register capacitance

-

70000

-

pF

Horizontal shift register

capacitance

S10814

-

400

-

pF

S10811

-

600

-

Summing gate capacitance

S10814

-20

-

pF

S10811

-

220

-

Reset gate capacitance

S10814

-20

-

pF

S10811

-

220

-

Transfer gate capacitance

S10814

-

250

-

pF

S10811

-

450

-

CTE

0.99995

0.99998

-

-

Vout

5

8

11

V

Zo

-

500

-

Ω

P

-

75

-

mW

+5 V power supply current

S10814

Icc

-1

-

mA

S10811

-

2

-

*1:

In case of the S10814, maximum frequency strongly depends on a peripheral circuit and cable length.

*2: Measured at half of the full well capacity. CTE is defined per pixel.

*4: Power dissipation of the on-chip amplifier