MCM69R738C

•MCM69R820C

5

MOTOROLA FAST SRAM

Rating

Symbol

Value

Unit

Core Supply Voltage

VDD

–0.5 to 4.6

V

Output Supply Voltage

VDDQ

–0.5 to VDD + 0.5

V

Voltage On Any Pin

Vin

–0.5 to VDD + 0.5

V

Input Current (per I/O)

Iin

±50

mA

Output Current (per I/O)

Iout

±70

mA

Operating Temperature

TA

0 to 70

°C

Temperature Under Bias

Tbias

–10 to 85

°C

Storage Temperature

Tstg

–55 to 125

°C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for

extended periods of time could affect device reliability.

PBGA PACKAGE THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Notes

Junction to Ambient (Still Air)

R

θJA

53

°C/W

1, 2

Junction to Ambient (@200 ft/min)

Single–Layer Board

R

θJA

38

°C/W

1, 2

Junction to Ambient (@200 ft/min)

Four–Layer Board

R

θJA

22

°C/W

Junction to Board (Bottom)

R

θJB

14

°C/W

3

Junction to Case (Top)

R

θJC

5

°C/W

4

NOTES:

1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient

temperature, air flow, power dissipation of other components on the board, and board thermal resistance.

2. Per SEMI G38–87.

3. Indicates the average thermal resistance between the die and the printed circuit board.

4. Indicates the average thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC–883

Method 1012.1).

CLOCK TRUTH TABLE

K

ZZ

SS

SW

SBa

SBb

SBc

SBd

DQ (n)

DQ (n + 1)

Mode

L – H

L

L

H

X

X

X

X

X

Dout 0–35

Read Cycle All Bytes

L – H

L

L

L

L

H

H

H

High–Z

Din 0–8

Write Cycle 1st Byte

L – H

L

L

L

H

L

H

H

High–Z

Din 9–17

Write Cycle 2nd Byte

L – H

L

L

L

H

H

L

H

High–Z

Din 18 – 26

Write Cycle 3rd Byte

L – H

L

L

L

H

H

H

L

High–Z

Din 27 – 35

Write Cycle 4th Byte

L – H

L

L

L

L

L

L

L

High–Z

Din 0–35

Write Cycle All Bytes

L – H

L

L

L

H

H

H

H

High–Z

High–Z

Abort Write Cycle

L – H

L

H

H

X

X

X

X

X

High–Z

Deselect Cycle

L – H

L

H

L

X

X

X

X

High–Z

High–Z

Deselect Cycle

X

H

X

X

X

X

X

X

High–Z

High–Z

Sleep Mode

This device contains circuitry to protect the

inputs against damage due to high static volt-

ages or electric fields; however, it is advised

that normal precautions be taken to avoid

application of any voltage higher than maxi-

mum rated voltages to this high–impedance

circuit.

This BiCMOS memory circuit has been

designed to meet the dc and ac specifications

shown in the tables, after thermal equilibrium

has been established.

This device contains circuitry that will ensure

the output devices are in High–Z at power up.

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com