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MRF5S21045NBR1 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

Part # MRF5S21045NBR1
Description  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF5S21045NBR1 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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6
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
-2 5
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 500 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
-3 0
-3 5
-4 0
-4 5
-5 0
-5 5
1
100
Figure 8. Pulse CW Output Power versus
Input Power
40
54
P3dB = 48.17 dBm (65.6 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 500 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
52
46
42
30
34
32
36
Actual
Ideal
P1dB = 47.60 dBm (57.5 W)
50
44
48
38
28
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
Pout, OUTPUT POWER (WATTS) AVG.
40
-10
-20
30
-30
-40
10
-50
1
10
100
20
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 x W-CDMA, 10 MHz
@ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
100
11
17
0.1
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 500 mA
f = 2140 MHz
10
1
16
15
14
13
12
50
40
30
20
10
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 12 V
16 V
80
6
16
050
20
10
8
30
40
12
14
IDQ = 500 mA
f = 2140 MHz
TC = -30_C
25
_C
IM3
ηD
-30
_C
85
_C
85
_C
25
_C
-30
_C
85
_C
ACPR
25
_C
-30
_C
25
_C
Gps
85
_C
TC = -30_C
-30
_C
25
_C
85
_C
25
_C
70
60
10
20 V
24 V
28 V
32 V
85
_C


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