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MRF6S18060NR1 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

Part # MRF6S18060NR1
Description  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF6S18060NR1 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRF6S18060NR1 MRF6S18060NBR1
TYPICAL CHARACTERISTICS — 1900 MHz
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
Figure 8. EVM versus Frequency
100
10
17
1
0
70
VDD = 26 Vdc
IDQ = 600 mA
f = 1960 MHz
TC = −30_C
−30
_C
25
_C
85
_C
10
16
15
14
13
12
11
60
50
40
30
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. EVM and Drain Efficiency versus
Output Power
−55
−60
−65
−70
−75
1920
−80
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
f, FREQUENCY (MHz)
Pout = 35 W Avg.
25 W Avg.
10 W Avg.
VDD = 26 Vdc
IDQ = 450 mA
Pout, OUTPUT POWER (WATTS) AVG.
100
4
12
VDD = 26 Vdc
IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
8
6
0
10
1
2
20
60
40
30
0
10
TC = −30_C, 25_C
85
_C
Gps
TC = −30_C
25
_C
85
_C
−75
−45
0
Pout, OUTPUT POWER (WATTS) AVG.
−50
−55
−60
−65
−70
10
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
ηD
ηD
2020
1
4
1900
3
2.5
1.5
1980
1960
1940
1920
3.5
2
25
_C
85
_C
2000
10
50
EVM
−30
_C
25
_C
85
_C
1940
1960
1980
2000
VDD = 26 Vdc
IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
Pout = 35 W Avg.
25 W Avg.
10 W Avg.
35 W Avg.
25 W Avg.
10 W Avg.
20
30
40
50
60
TC = 85_C
25
_C
−30
_C
−85
−55
0
Pout, OUTPUT POWER (WATTS) AVG.
−60
−70
−75
−80
10
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
20
30
40
50
60
−65
SR @ 400 kHz
SR @ 600 kHz
VDD = 26 Vdc
IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
VDD = 26 Vdc
IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
f, FREQUENCY (MHz)


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