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MRF6S21060NR1 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

Part # MRF6S21060NR1
Description  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF6S21060NR1 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
TYPICAL CHARACTERISTICS
200
10
17
1
0
70
Pout, OUTPUT POWER (WATTS) CW
10
16
14
12
60
50
40
30
15
13
11
VDD = 28 Vdc
IDQ = 610 mA
f = 2140 MHz
ηD
Gps
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
-1 0
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
-2 0
-3 0
-4 0
-5 0
1
100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
-60
Pout, OUTPUT POWER (WATTS) AVG.
60
0
-20
40
30
-30
10
10
200
-40
40
57
P3dB = 49.986 dBm (99.68 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 610 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
53
49
45
43
32
30
36
34
Actual
Ideal
55
51
47
28
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
VDD = 24 V
120
10
16
0
12
11
20
13
14
IDQ = 610 mA
f = 2140 MHz
50
-50
ηD
ACPR
28 V
32 V
38
1
-10
40
60
80
10
20
P1dB = 49.252 dBm (84.18 W)
20
-30
_C
TC = -30_C
85
_C
25
_C
TC = -30_C
85
_C
25
_C
85
_C
-30
_C
100
-30
_C
25
_C
85
_C
100
25
_C
15
100
VDD = 28 Vdc, IDQ = 610 mA
f1 = 2135 MHz, f2 = 2145 MHz
2-Carrier W-CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
25
_C


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