2

RF Device Data

Freescale Semiconductor

MRF6S21100NR1 MRF6S21100NBR1

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1B (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22-A113, IPC/JEDEC J-STD-020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics

Gate Threshold Voltage

1

2

3

Vdc

Gate Quiescent Voltage

—

2.8

—

Vdc

2.2

3.1

4.4

Vdc

Drain-Source On-Voltage

—

0.24

—

Vdc

Reverse Transfer Capacitance

—

1.5

—

pF

2157.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @

±5 MHz

Offset. IM3 measured in 3.84 MHz Bandwidth @

±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

13

14.5

16

dB

Drain Efficiency

24

25.5

36

%

Intermodulation Distortion

IM3

-47

-37

-35

dBc

Adjacent Channel Power Ratio

ACPR

-50

-40

-38

dBc

Input Return Loss

IRL

—

-12

-10

dB

schematic.

2. Part is internally matched both on input and output.