Electronic Components Datasheet Search |
|
MRF6S21100NBR1 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
|
MRF6S21100NBR1 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 20 page MRF6S21100NR1 MRF6S21100NBR1 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz . Suitable for TDM A , CD M A and multicarrier am plifier applications. To be used in Class AB for PCN- PCS/cellular radio, WLL and TD-SCDMA applications. • Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA, Pout = 23 Watts Avg., f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 225°C Capable Plastic Package • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +68 Vdc Gate-Source Voltage VGS -0.5, +12 Vdc Storage Temperature Range Tstg -65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80 °C, 100 W CW Case Temperature 73 °C, 23 W CW RθJC 0.57 0.66 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Document Number: MRF6S21100N Rev. 3, 12/2008 Freescale Semiconductor Technical Data MRF6S21100NR1 MRF6S21100NBR1 2110-2170 MHz, 23 W AVG., 28 V 2 x W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC MRF6S21100NR1 CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC MRF6S21100NBR1 © Freescale Semiconductor, Inc., 2005-2008. All rights reserved. |
Similar Part No. - MRF6S21100NBR1 |
|
Similar Description - MRF6S21100NBR1 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |