MRF6S21100NR1 MRF6S21100NBR1

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz . Suitable for TDM A , CD M A and multicarrier am plifier

applications. To be used in Class AB for PCN- PCS/cellular radio, WLL and

TD-SCDMA applications.

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14.5 dB

Drain

Efficiency — 25.5%

IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Bandwidth

ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• 225°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +68

Vdc

Gate-Source Voltage

-0.5, +12

Vdc

Storage Temperature Range

-65 to +150

°C

Case Operating Temperature

150

°C

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 80

°C, 100 W CW

Case Temperature 73

°C, 23 W CW

0.57

0.66

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF6S21100N

Rev. 3, 12/2008

Freescale Semiconductor

Technical Data

MRF6S21100NR1

MRF6S21100NBR1

2110-2170 MHz, 23 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF6S21100NR1

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF6S21100NBR1

© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.