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MRF6V4300NR1 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc |
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MRF6V4300NR1 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc |
6 / 15 page 6 RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 TYPICAL CHARACTERISTICS Figure 10. Power Gain versus Output Power Pout, OUTPUT POWER (WATTS) CW VDD =20 V 25 V 400 16 23 0 200 50 18 17 100 150 21 20 22 IDQ = 900 mA f = 450 MHz 35 V 40 V 19 250 300 350 45 V 40 35 60 15 25_C TC =--30_C 85_C 25 50 45 40 Pin, INPUT POWER (dBm) Figure 11. Power Output versus Power Input VDD =50 Vdc IDQ = 900 mA f = 450 MHz 20 30 55 18 25 10 10 80 24 22 20 70 60 50 40 30 20 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain and Drain Efficiency versus CW Output Power ηD 23 21 19 100 500 25_C TC =--30_C 85_C 85_C Gps VDD =50 Vdc IDQ = 900 mA f = 450 MHz 25_C --30_C 30 V 50 V 35 250 90 TJ, JUNCTION TEMPERATURE (°C) Figure 13. MTTF versus Junction Temperature This above graph displays calculated MTTF in hours when the device is operated at VDD =50 Vdc,Pout = 300 W, and ηD = 60%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 108 107 105 110 130 150 170 190 210 230 106 |
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