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MRF6V14300HR3 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF6V14300HR3 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 10 page MRF6V14300HR3 MRF6V14300HSR3 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD =50 Volts,IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power Gain — 18 dB Drain Efficiency — 60.5% • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +100 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 65°C, 330 W Pulsed, 300 μsec Pulse Width, 12% Duty Cycle ZθJC 0.13 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Document Number: MRF6V14300H Rev. 3, 4/2010 Freescale Semiconductor Technical Data 1400 MHz, 330 W, 50 V PULSED LATERAL N--CHANNEL RF POWER MOSFETs MRF6V14300HR3 MRF6V14300HSR3 CASE 465A--06, STYLE 1 NI--780S MRF6V14300HSR3 CASE 465--06, STYLE 1 NI--780 MRF6V14300HR3 © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. |
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