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FC806 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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FC806 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 2 page 22898HA (KT)/O3196GI/8030MH, TA, TS No.3401-1/2 FC806 Ordering number :EN3401A 50V, 100mA Rectifier SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Silicon Schottky Barrier Diode r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s r e v e R k a e P e v i t i t e p e RV M R R 0 5V e g a t l o V e g r u S e s r e v e R k a e P e v i t i t e p e r n o NV M S R 5 5V t n e r r u C t u p t u O e g a r e v AIO 0 0 1A m t n e r r u C d r a w r o F e g r u SI M S F e l c y c 1 , e v a w e n i s z H M 0 5 2A e r u t a r e p m e T n o i t c n u Jj T 5 2 1 + o t 5 5 – e r u t a r e p m e T e g a r o t Sg t s T 5 2 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a Rt i n U n i mp y tx a m e g a t l o V e s r e v e RVR IR A µ 0 5 =0 5V e g a t l o V d r a w r o FVF IF A m 0 0 1 = 5 5 . 0V t n e r r u C e s r e v e RIR VR V 5 2 = 5 1A µ e c n a t i c a p a C l a n i m e t r e t n IC VR z H M 1 = f , V 0 1 =4 . 4F p e m i T y r e v o c e R e s r e v e Rr r tIF I = R t i u c r i C t s e T d e i f i c e p s e e S , A m 0 0 1 = 0 1s n e c n a t s i s e R l a m r e h T) a - j ( h t R 0 6 5 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 1236A [FC806] 1:Cathode 2:Cathode 3:Anode 4:No Contact 5:Anode SANYO:CP5 Electrical Characteristics at Ta = 25˚C trr Test Circuit · Marking:806 Electrical Connection ˚C ˚C Features · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. · The FC806 is formed with two chips, each being equivalent to the SB01–05CP, placed in one package. ˚C/W |
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