MRF7S19100NR1 MRF7S19100NBR1

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to

1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

used in Class AB and Class C for PCN - PCS/cellular radio and WLL

applications.

64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 7.5 dB @ 0.01% Probability on CCDF.

Power Gain — 17.5 dB

Drain Efficiency — 30%

Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — -38 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 100 Watts CW

Peak Tuned Output Power

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Designed for Digital Predistortion Error Correction Systems

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +10

Vdc

Operating Voltage

32, +0

Vdc

Storage Temperature Range

- 65 to +200

°C

Case Operating Temperature

150

°C

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 82°C, 100 W CW

Case Temperature 79°C, 29 W CW

0.57

0.68

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF7S19100N

Rev. 3, 12/2008

Freescale Semiconductor

Technical Data

MRF7S19100NR1

MRF7S19100NBR1

1930 -1990 MHz, 29 W AVG., 28 V

SINGLE W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF7S19100NR1

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF7S19100NBR1

© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.