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MRF7S19170HR3 Datasheet(PDF) 10 Page - Freescale Semiconductor, Inc |
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MRF7S19170HR3 Datasheet(HTML) 10 Page - Freescale Semiconductor, Inc |
10 / 13 page 10 RF Device Data Freescale Semiconductor MRF7S19170HR3 MRF7S19170HSR3 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 36 P3dB = 53.97 dBm (249 W) Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1400 m, Pulsed CW 12 μsec(on), 10% Duty Cycle, f = 1960 MHz 56 54 52 37 39 38 41 40 44 42 Actual Ideal P1dB = 53.25 dBm (211 W) 57 55 51 43 P6dB = 54.33 dBm (271 W) NOTE: Measured in a Peak Tuned Load Pull Fixture 53 58 59 60 61 35 34 33 32 Test Impedances per Compression Level Zsource Ω Zload Ω P3dB 2.34 - j9.24 0.79 - j2.94 Figure 17. Pulsed CW Output Power versus Input Power 36 P3dB = 54.9 dBm (310 W) Pin, INPUT POWER (dBm) VDD = 32 Vdc, IDQ = 1400 mA, Pulsed CW 12 μsec(on), 10% Duty Cycle, f = 1960 MHz 56 54 52 37 41 40 44 42 Actual Ideal P1dB = 54.14 dBm (259 W) 57 55 43 P6dB = 55.27 dBm (336 W) NOTE: Measured in a Peak Tuned Load Pull Fixture 53 58 59 60 61 62 35 34 33 45 38 39 Test Impedances per Compression Level Zsource Ω Zload Ω P3dB 2.34 - j9.24 0.79 - j2.94 Figure 18. Pulsed CW Output Power versus Input Power |
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