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MRF377HR3 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF377HR3 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 14 page 2 RF Device Data Freescale Semiconductor MRF377HR3 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model 7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (1) Drain-Source Breakdown Voltage (4) (VGS = 0 Vdc, ID =10 μA) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (4) (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μA) VGS(th) — 2.8 — Vdc On Characteristics Gate Quiescent Voltage (3) (VDS = 32 Vdc, ID = 2000 mAdc) VGS(Q) 2.5 3.5 4.5 Vdc Drain-Source On-Voltage (1) (VGS = 10 Vdc, ID = 3 A) VDS(on) — 0.27 — Vdc Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 3.2 — pF Functional Tests (3) (In DVBT OFDM Single-Channel, Narrowband Fixture, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) Gps 16.5 18.2 — dB Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) ηD 21 22.9 — % Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) ACPR — -59.2 -57 dBc Typical Performances (3) (In DVBT OFDM Single-Channel, Broadband Fixture, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Gps — — — — — 17.6 17.6 17.4 17.4 16.8 — — — — — dB 1. Each side of device measured separately. 2. Part is internally matched both on input and output. 3. Measurement made with device in push-pull configuration. 4. Drains are tied together internally as this is a total device value. (continued) |
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