4

RF Device Data

Freescale Semiconductor

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1

Characteristic

Symbol

Min

Typ

Max

Unit

P1dB

—

30

—

W

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

—

83

—

MHz

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

—

90

—

MHz

—

0.7

—

dB

Average Deviation from Linear Phase in 200 MHz Bandwidth

Φ

—

3.15

—

°

Delay

—

3.21

—

ns

f = 3500 MHz, Six Sigma Window

∆Φ

—

13.88

—

°

Gain Variation over Temperature

(--30°Cto+85°C)

∆G

—

0.046

—

dB/°C

Output Power Variation over Temperature

(--30°Cto+85°C)

∆P1dB

—

0.015

—

dB/°C

0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.

Power Gain

—

23.5

—

dB

Power Added Efficiency

PAE

—

3.5

—

%

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

—

9.2

—

dB

Adjacent Channel Power Ratio

ACPR

—

--55

—

dBc

Input Return Loss

IRL

—

--12

—

dB