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MW7IC3825NR1 Datasheet(PDF) 4 Page - Freescale Semiconductor, Inc |
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MW7IC3825NR1 Datasheet(HTML) 4 Page - Freescale Semiconductor, Inc |
4 / 23 page 4 RF Device Data Freescale Semiconductor MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, 3400--3600 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 30 — W IMD Symmetry @ 2 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym — 83 — MHz VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 90 — MHz Gain Flatness in 200 MHz Bandwidth @ Pout =5 W Avg. GF — 0.7 — dB Average Deviation from Linear Phase in 200 MHz Bandwidth @Pout =25 W CW Φ — 3.15 — ° Average Group Delay @ Pout = 25 W CW, f = 3500 MHz Delay — 3.21 — ns Part--to--Part Insertion Phase Variation @ Pout =25 W CW, f = 3500 MHz, Six Sigma Window ∆Φ — 13.88 — ° Gain Variation over Temperature (--30°Cto+85°C) ∆G — 0.046 — dB/°C Output Power Variation over Temperature (--30°Cto+85°C) ∆P1dB — 0.015 — dB/°C Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 = 190 mA, IDQ2 = 230 mA, Pout = 0.5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Gps — 23.5 — dB Power Added Efficiency PAE — 3.5 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR — 9.2 — dB Adjacent Channel Power Ratio ACPR — --55 — dBc Input Return Loss IRL — --12 — dB |
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