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MRF8S9202N Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc

Part # MRF8S9202N
Description  RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF8S9202N Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc

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MRF8S9202NR3
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1300 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
200
—
W
IMD Symmetry @ 180 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
7.5
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
70
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout =58 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(--30°Cto+85°C)
∆G
—
0.02
—
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
∆P1dB
—
0.006
—
dB/°C


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