IPU135N08N3G datasheet(1/9 Pages) INFINEON

Part #	IPU135N08N3G

Description	OptiMOS(TM)3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPU135N08N3 G

OptiMOS(TM)3 Power-Transistor

Features

• Ideal for high frequency switching and sync. rec.

• Optimized technology for DC/DC converters

• Excellent gate charge x R DS(on) product (FOM)

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC

1) for target applications

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

2)

50

A

T C=100 °C

39

Pulsed drain current

2)

I D,pulse

T C=25 °C

200

Avalanche energy, single pulse

3)

E AS

I D=50 A, R GS=25 Ω

40

mJ

Gate source voltage

V GS

±20

V

Power dissipation

P tot

T C=25 °C

79

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

3) See figure 13 for more detailed information

Value

1)J-STD20 and JESD22

2) See figure 3 for more detailed information

V DS

80

V

R DS(on),max

13.5

m

Ω

I D

50

A

Product Summary

Type

IPU135N08N3 G

Package

PG-TO251-3

Marking

135N08N

1

2 3

Rev. 2.1

page 1

2008-11-04

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