IDH08S60C datasheet(3/7 Pages) INFINEON

Part #	IDH08S60C

Description	2ndGeneration thinQ!TM SiC Schottky Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IDH08S60C

1 Power dissipation

2 Diode forward current

P tot=f(T C)

I F=f(T C); T j≤175 °C

parameter: RthJC(max)

parameter: R thJC(max); V F(max)

3 Typ. forward characteristic

4 Typ. forward characteristic in surge current

I F=f(V F); t p=400 µs

mode

parameter: T j

I F=f(V F); t p=400 µs; parameter: T j

0

10

20

30

40

50

60

70

80

25

50

75

100

125

150

175

200

T C [°C]

-55 °C

25 °C

100 °C

150 °C

175 °C

0

5

10

15

20

01

234

V F[V]

0

4

8

12

16

20

25

50

75

100

125

150

175

200

T C [°C]

-55 °C

25 °C

100 °C

150 °C

175 °C

0

20

40

60

80

02

468

V F [V]

Rev. 2.0

page 3

2009-06-02

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IDH08S60C Datasheet(PDF) 3 Page - Infineon Technologies AG

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