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IDW100E60 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # IDW100E60
Description  Fast Switching EmCon Diode
Download  7 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IDW100E60 Datasheet(HTML) 2 Page - Infineon Technologies AG

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IDW100E60
Power Semiconductors
2
Rev. 2.1 Nov 09
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
Thermal resistance,
junction – case
RthJC
0.40
Thermal resistance,
junction – ambient
RthJA
40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
VRRM
I R=0.25 mA
600
-
-
Diode forward voltage
VF
IF=100A
Tj=25°C
Tj=175°C
-
-
1.65
1.65
2.0
-
V
Reverse leakage current
IR
VR=600V
Tj=25°C
Tj=175°C
-
-
-
-
40
1000
µA
Dynamic Electrical Characteristics
Diode reverse recovery time
trr
-
120
-
ns
Diode reverse recovery charge
Qrr
-
3.6
-
µC
Diode peak reverse recovery current
Irr
-
49.5
-
A
Diode peak rate of fall of reverse
recovery current during tb
dIrr/dt
Tj=25°C
VR=400V,
IF=100A,
dIF/dt=1200A/µs
-
750
-
A/µs
Diode reverse recovery time
trr
-
168
-
ns
Diode reverse recovery charge
Qrrm
-
5.8
-
µC
Diode peak reverse recovery current
Irr
-
61.6
-
A
Diode peak rate of fall of reverse
recovery current during tb
dIrr/dt
Tj=125°C
VR=400V,
IF=100A,
dIF/dt=1200A/µs
-
705
-
A/µs
Diode reverse recovery time
trr
-
200
-
ns
Diode reverse recovery charge
Qrrm
-
7.8
-
µC
Diode peak reverse recovery current
Irr
-
67.0
-
A
Diode peak rate of fall of reverse
recovery current during tb
dIrr/dt
Tj=175°C
VR=400V,
IF=100A,
dIF/dt=1200A/µs
-
650
-
A/µs


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