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IGW60T120 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # IGW60T120
Description  Low Loss IGBT in TrenchStop and Fieldstop technology
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IGW60T120 Datasheet(HTML) 3 Page - Infineon Technologies AG

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IGW60T120
TrenchStop® Series
Power Semiconductors
3
Rev. 2.4 Nov. 09
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
50
-
Rise time
tr
-
44
-
Turn-off delay time
td(off)
-
480
-
Fall time
tf
-
80
-
ns
Turn-on energy
Eon
-
4.3
-
Turn-off energy
Eoff
-
5.2
-
Total switching energy
Ets
Tj=25°C,
VCC=600V,IC=60A,
VGE=0/15V,
RG=10Ω,
Lσ
2) =180nH,
Cσ
2) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
9.5
-
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
50
-
Rise time
tr
-
45
-
Turn-off delay time
td(off)
-
600
-
Fall time
tf
-
130
-
ns
Turn-on energy
Eon
-
6.4
-
Turn-off energy
Eoff
-
9.4
-
Total switching energy
Ets
Tj=150°C
VCC=600V,IC=60A,
VGE=0/15V,
RG= 10Ω,
Lσ
2) =180nH,
Cσ
2) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
15.8
-
mJ
2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.


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