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N2500N Datasheet(PDF) 7 Page - Renesas Technology Corp |
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N2500N Datasheet(HTML) 7 Page - Renesas Technology Corp |
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7 / 8 page  Data Sheet D19677EJ1V1DS 5 N2500N DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0 2 4 6 8 10 12 -75 -25 25 75 125 175 ID = 0.25 A Pulsed VGS = 4.5 V 2.5 V 2.0 V Tch - Channel Temperature - °C 0.1 1 10 100 1000 0.1 1 10 100 1000 VGS = 0 V f = 1.0 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1 10 100 0.1 1 10 VDD = 125 V VGS = 4.5 V RG = 10 Ω td(on) tf tr td(off) ID - Drain Current - A 0 40 80 120 160 200 240 012 3456 0 1 2 3 4 5 6 ID = 0.5 A VGS VDS VDD = 200 V 125 V 50 V QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 Pulsed 0 V VGS = 4.5 V VF(S-D) - Source to Drain Voltage - V 1 10 100 1000 0.1 1 10 VGS = 0 V di/dt = 100 A/ μs IF - Diode Forward Current - A |
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