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NP82N06MLG-S18-AY Datasheet(PDF) 8 Page - Renesas Technology Corp |
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NP82N06MLG-S18-AY Datasheet(HTML) 8 Page - Renesas Technology Corp |
8 / 10 page Data Sheet D19802EJ1V0DS 6 NP82N06MLG, NP82N06NLG PACKAGE DRAWINGS (Unit: mm) TO-220 (MP-25K) TO-262 (MP-25SK) 10.0 ±0.2 3.8 ±0.2 4.45 ±0.2 1.3 ±0.2 1.27 ±0.2 0.8 ±0.1 0.5 ±0.2 2.5 ±0.2 2.54 TYP. 2.54 TYP. φ 1 4 23 1. Gate 2. Drain 3. Source 4. Fin (Drain) 10.0 ±0.2 4.45 ±0.2 1.3 ±0.2 1.27 ±0.2 0.8 ±0.1 0.5 ±0.2 2.5 ±0.2 2.54 TYP. 2.54 TYP. 1 4 23 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
Similar Part No. - NP82N06MLG-S18-AY |
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Similar Description - NP82N06MLG-S18-AY |
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