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UPA2353T1G-E4-A Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # UPA2353T1G-E4-A
Description  MOS FIELD EFFECT TRANSISTOR
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPA2353T1G-E4-A Datasheet(HTML) 7 Page - Renesas Technology Corp

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Data Sheet G19315EJ1V0DS
5
μPA2353
SOURCE CURRENT vs.
SOURCE TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
10
20
30
40
50
60
0
0.5
1
1.5
2
2.5
3
TEST CIRCUIT 5
Pulsed
VGS = 4.5 V
2.5 V
1.8 V
3.1 V
VSS - Source to Source Voltage - V
0.001
0.01
0.1
1
10
100
00.5
11.5
22.5
TEST CIRCUIT 3
VSS = 10 V
Pulsed
TA = 125
°C
75
°C
25
°C
−25°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
SOURCE CURRENT
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
TEST CIRCUIT 3
VSS = 10 V
IS = 1.0 mA
Tch - Channel Temperature -
°C
0.1
1
10
100
0.01
0.1
1
10
TEST CIRCUIT 4
VSS = 10 V
Pulsed
TA =
−25°C
25
°C
75
°C
125
°C
IS - Source Current - A
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
SOURCE CURRENT
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
50
60
70
0.01
0.1
1
10
100
TEST CIRCUIT 5
Pulsed
VGS = 3.1 V
4.5 V
VGS = 1.8 V
2.5 V
IS - Source Current - A
0
10
20
30
40
50
60
70
012345
67
TEST CIRCUIT 5
IS = 3.0 A
Pulsed
VGS - Gate to Source Voltage - V


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