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MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOSFET

DATA SHEET

Document No. G19790EJ1V0DS00 (1st edition)

Date Published May 2009 NS

Printed in Japan

2009

PACKAGE DRAWING (Unit: mm)

1

2

3

4

7

8

6

5

6

±0.2

3.65

±0.2

0.7

±0.15

0.6

±0.15

0.10 S

1, 2, 3

: Source

4

: Gate

5, 6, 7, 8: Drain

5.4

±0.2

1

0.2

DESCRIPTION

The

μ PA2743T1A is N-channel MOS Field Effect Transistor designed

for power management applications of a notebook computer.

FEATURES

• Low on-state resistance

• Built-in gate protection diode

• Thin type surface mount package with heat spreader (8-pin HVSON (6051))

• RoHS Compliant

°C, All terminals are connected.)

30

V

±20

V

Drain Current (DC)

±29

A

Drain Current (pulse)

Note1

±170

A

Total Power Dissipation

Note2

1.5

W

Total Power Dissipation (PW = 10 sec)

Note2

4.6

W

Channel Temperature

150

°C

Storage Temperature

−55 to +150

°C

Single Avalanche Current

Note3

29

A

Single Avalanche Energy

Note3

84.1

mJ

THERMAL RESISTANCE

Channel to Ambient Thermal Resistance

Note2

83.3

°C/W

Channel to Case (Drain) Thermal Resistance

1.5

°C/W

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

μH

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain