IPB036N12N3G datasheet(2/9 Pages) INFINEON

Part #	IPB036N12N3G

Description	OptiMOS?? Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB036N12N3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

-

0.5

K/W

Thermal resistance,

R thJA

minimal footprint

-

62

junction - ambient

6 cm

2 cooling area4)

--

40

Electrical characteristics,

at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

120

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=270 µA

234

Zero gate voltage drain current

I DSS

V DS=100 V, V GS=0 V,

T j=25 °C

-

0.1

1

µA

V DS=100 V, V GS=0 V,

T j=125 °C

-

10

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

1

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=100 A

-

2.9

3.6

m

Ω

Gate resistance

R G

-

1.4

-

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=100 A

98

195

-

S

Values

4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.2

page 2

2009-12-17

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