IPD22N08S2L-50 datasheet(6/8 Pages) INFINEON

Part #	IPD22N08S2L-50

Description	OptiMOS Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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6 / 8 page

IPD22N08S2L-50

9 Typ. Drain-source on-state resistance

10 Typ. gate threshold voltage

R DS(ON) = f(T j)

V GS(th) = f(T j); V GS = V DS

parameter: I D = 11 A; VGS = 10 V

parameter: I D

11 Typ. capacitances

12 Typical forward diode characteristicis

C = f(V DS); V GS = 0 V; f = 1 MHz

IF = f(VSD)

parameter: T j

25 °C

175 °C

10

3

10

2

10

1

10

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

V SD [V]

Ciss

Coss

Crss

10

4

10

3

10

2

0

5

10

15

20

25

30

V DS [V]

31 µA

155 µA

0

0.5

1

1.5

2

2.5

-60

-20

20

60

100

140

180

T j [°C]

20

30

40

50

60

70

80

90

-60

-20

20

60

100

140

180

T j [°C]

Rev. 1.0

page 6

2006-07-18

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IPD22N08S2L-50 Datasheet(PDF) 6 Page - Infineon Technologies AG

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