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IPD036N04LG Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IPD036N04LG
Description  OptiMOS3 Power-Transistor
Download  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD036N04LG Datasheet(HTML) 6 Page - Infineon Technologies AG

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IPD036N04L G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=90 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
typ
98 %
0
1
2
3
4
5
6
7
8
-60
-20
20
60
100
140
180
T j [°C]
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
T j [°C]
Ciss
Coss
Crss
10
4
10
3
10
2
10
1
0
1020
3040
V DS [V]
25 °C
175 °C
25 °C, 98%
175 °C, 98%
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V SD [V]
Rev. 1.0
page 6
2007-12-06


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