IPD042P03L3G datasheet(4/9 Pages) INFINEON

Part #	IPD042P03L3G

Description	OptiMOSTM P3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD042P03L3 G

1 Power dissipation

2 Drain current

P tot=f(T C); t p≤10 s

I D=f(T C); |V GS|≥10 V; t p≤10 s

3 Safe operating area

4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C

1); D =0

Z thJS=f(t p)

parameter: t p

parameter: D =t p/T

1 µs

100 µs

1 ms

10 ms

10

-1

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

10

2

0.01

0.1

1

10

100

1000

0.1

1

10

100

-V DS [V]

limited by on-state

resistance

DC

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

10

1

10

0

10

-1

10

-2

10

-3

10

-4

10

-5

10

1

10

0

10

-1

10

-2

0.01

0.1

1

10

0.00001

0.0001

0.001

0.01

0.1

1

10

t p [s]

0

10

20

30

40

50

60

70

80

90

100

110

120

130

140

150

160

0

40

80

120

160

T C [°C]

0

5

10

15

20

25

30

35

40

45

50

55

60

65

70

75

80

0

40

80

120

160

T C [°C]

Rev. 2.0

page 4

2009-08-18

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IPD042P03L3G Datasheet(PDF) 4 Page - Infineon Technologies AG

IPD042P03L3G Datasheet(HTML) 4 Page - Infineon Technologies AG

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