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IPD042P03L3G Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IPD042P03L3G Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 9 page IPD042P03L3 G 1 Power dissipation 2 Drain current P tot=f(T C); t p≤10 s I D=f(T C); |V GS|≥10 V; t p≤10 s 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C 1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 1 µs 100 µs 1 ms 10 ms 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 0.01 0.1 1 10 100 1000 0.1 1 10 100 -V DS [V] limited by on-state resistance DC single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t p [s] 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 0 40 80 120 160 T C [°C] 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 0 40 80 120 160 T C [°C] Rev. 2.0 page 4 2009-08-18 |
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