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IPD079N06L3G Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # IPD079N06L3G
Description  OptiMOS(TM)3 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD079N06L3G Datasheet(HTML) 4 Page - Infineon Technologies AG

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IPD079N06L3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
10
3
10
2
10
1
10
0
10
-1
V DS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
1
10
0
10
-1
10
-2
t p [s]
0
20
40
60
0
50
100
150
200
T C [°C]
0
20
40
60
80
100
0
50
100
150
200
T C [°C]
Rev. 2.0
page 4
2008-12-09


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