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1N5809US Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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1N5809US Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page 1N5807US - 1N5811US ULTRAFAST RECOVERY RECTIFIER DIODES PRV : 50 - 150 Volts Io : 6.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ultrafast recovery time * Pb / RoHS Free MECHANICAL DATA : * Case : SMB Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.1079 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. SYMBOL 1N5807US 1N5809US 1N5811US UNIT Maximum Working Peak Reverse Voltage VRWM 50 100 150 V Minimum Breakdown Voltage @ 100µA VBR(Min) 60 110 160 V Maximum Average Forward Current 6.0 (1) 3.0 (2) Maximum Forward Surge Current (3) IFSM 125 A Maximum Peak Forward Voltage at IF = 4.0 A. VF 0.875 V Maximum Reverse Current at VRWM Ta = 25 °C IR 5.0 Ta = 100 °C IR(H) 150 Maximum Reverse Recovery Time (4) Trr 30 ns Thermal Resistance, Junction to Lead RӨJL 22 °C/W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Rated at TL=75 °C at 3/8 inc lead length. Derate at 60 mA/°C for TL above 75 °C. (2) Derate linearly at 25 mA/°C above Ta = 55 °C. This rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) dose not exceed 175 °C. (3) Ta = 25 °C @ IF(AV) = 3A and VRWM for ten 8.3 ms surges at 1 minute intervals. (4) IF = 1A, IRM = 1A, IR(REC) = 0.1 A and di/dt = 10 A/μs min. Page 1 of 2 Rev. 00 : April 4, 2007 μA RATING IF(AV) A 0.22 ± 0.07 2.0 ± 0.1 2.3 ± 0.2 3.6 ± 0.15 SMB (DO-214AA) 1.1 ± 0.3 Dimensions in millimeters Certificate : TH97/10561QM Certificate : TW00/17276EM |
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