NTMFS4925N

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

5.4

°C/W

Junction−to−Ambient – Steady State (Note 3)

46.3

Junction−to−Ambient – Steady State (Note 4)

136.2

Junction−to−Ambient – (t ≤ 10 s) (Note 3)

20.3

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

21

mV/°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.2

1.7

2.2

V

Negative Threshold Temperature Coefficient

3.9

mV/°C

Drain−to−Source On Resistance

4.0

6.0

mW

4.0

6.4

10

6.3

Forward Transconductance

52

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

1264

pF

Output Capacitance

483

Reverse Transfer Capacitance

143

Total Gate Charge

10.8

nC

Threshold Gate Charge

2.0

Gate−to−Source Charge

3.8

Gate−to−Drain Charge

4.2

Total Gate Charge

21.5

nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

9.5

ns

Rise Time

32.7

Turn−Off Delay Time

16.4

Fall Time

6.2

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.