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IPI50R199CP Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPI50R199CP Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page IPI50R199CP Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1800 - pF Output capacitance C oss -80- Effective output capacitance, energy related 5) C o(er) -75- Effective output capacitance, time related 6) C o(tr) - 160 - Turn-on delay time t d(on) -35- ns Rise time t r -14- Turn-off delay time t d(off) -80- Fall time t f -10- Gate Charge Characteristics Gate to source charge Q gs -8 - nC Gate to drain charge Q gd -11- Gate charge total Q g -34 45 Gate plateau voltage V plateau - 5.2 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=9.9 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr - 340 - ns Reverse recovery charge Q rr -4 - µC Peak reverse recovery current I rrm -24- A 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 4) I SD≤I D, di /dt ≤200A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low and high side switch V R=400 V, I F=I S, di F/dt =100 A/µs 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=10 V, I D=9.9 A, R G=16.4 Ω V DD=400 V, I D=9.9 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 400 V Rev. 2.0 page 3 2007-11-20 |
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