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IPB25N06S3-25 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPB25N06S3-25 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 25 A pulsed parameter: V DD 46 48 50 52 54 56 58 60 62 64 66 -60 -20 20 60 100 140 180 T j [°C] 11 V 44 V 0 2 4 6 8 10 12 0 1020 304050 Q gate [nC] 25 A 12.5 A 6.25 A 0 50 100 150 200 250 300 0 50 100 150 200 T j [°C] V GS Q gate Q gs Q gd Q g V GS Q gate Q gs Q gd Q g Rev. 1.1 page 7 2007-11-07 |
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